Transient electron transport in the ternary alloys AlxGa1-xN, InxGa1-xN, AlxIn1-xN using the Monte Carlo method of simulation.
Abstract
The transient electron transport and overspeed phenomenon in the binary cubic compounds GaN, InN and AlN and their ternary alloys AlGaN, InGaN and InAlN are examined and compared. For all these alloys, the overspeed phenomenon occurs beyond the critical field at which electrons can pass from the valence band to the conduction band. This field is relatively large for these alloys, particularly when the molar fraction of aluminum is large in the InAlN and AlGaN alloys. This field can reach 500 kV/cm for AlN and it is smaller in alloys with high indium concentration. It is 70 kV/cm for InN. Thus, the critical field for these alloys can vary from kV/cm to 500 kV/cm, including 150 KV/cm for GaN. The overspeed phenomenon becomes greater in the presence of Indium and it is less important in the presence of Aluminum. The present work focuses on the electronic transport in the alloys AlxGa1-xN, InxGa1-xN and InxAl1-xN in the transitional mode by using the Monte Carlo method of simulation which is the most appropriate.
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Roosen G. Materiaux pour l’Optoelectronique, Traite EGEM serie Optoelectronique., tome 7, Hermes Science Publications, Paris, 2003.
Foutz BE, O’Leary SK, Shur MS, Eastman LF. Transient electron transport in wurtzite GaN, InN, and AlN. Journal of applied physics. 1999;85(11):7727-7734.
O’Leary SK, Foutz BE, Shur MS, Eastman LF. Steady-state and transient electron transport within bulk wurtzite indium nitride: An updated semiclassical three-valley Monte Carlo simulation analysis. Applied Physics Letters. 2005;87(22):222103.
Vurgaftman I, Meyer JÁ, Ram-Mohan LÁ. Band parameters for III–V compound semiconductors and their alloys. Journal of applied physics. 2001;89(11):5815-5875.
Albrecht JD, Wang RP, Ruden PP, Farahmand M, Brennan KF. Monte Carlo calculation of electron transport properties of bulk AlN. Journal of applied physics. 1998;83(3):1446-1449.
Wang F, Li SS, Xia JB, Jiang HX, Lin JY, Li J, Wei SH. Effects of the wave function localization in AlInGaN quaternary alloys. Applied Physics Letters. 2007;91(6):061125.
Vurgaftman I, Meyer JN. Band parameters for nitrogen-containing semiconductors. Journal of Applied Physics. 2003;94(6):3675-3696.
Madelung O. Semiconductors: data handbook. 3rd Ed. Springer Science & Business Media; 2004.
Dessenne F. Etude théorique et optimisation de transistors à effet de champ de la filière InP et de la filière GaN (Doctoral dissertation, Lille 1). 1998.
Kolnik J, Oğuzman İH, Brennan KF, Wang R, Ruden PP, Wang Y. Electronic transport studies of bulk zincblende and wurtzite phases of GaN based on an ensemble Monte Carlo calculation including a full zone band structure. Journal of Applied Physics. 1995;78(2):1033-1038.
O'leary SK, Foutz BE, Shur MS, Eastman LF. Steady-state and transient electron transport within the III–V nitride semiconductors, GaN, AlN, and InN: a review. Journal of Materials Science: Materials in Electronics. 2006;17(2):87-126.
Chin VW, Tansley TL, Osotchan T. Electron mobilities in gallium, indium, and aluminum nitrides. Journal of Applied Physics. 1994;75(11):7365-7372.
Hadi WA, Shur MS, O’Leary SK. Steady-state and transient electron transport within the wide energy gap compound semiconductors gallium nitride and zinc oxide: an updated and critical review. Journal of Materials Science: Materials in Electronics. 2014;25(11):4675-4713.
. Foutz BE, Eastman LF, Bhapkar UV, Shur MS. Comparison of high field electron transport in GaN and GaAs. Applied physics letters. 1997;70(21):2849-2851.
Shur M, Gelmont B, Asif Khan M. Electron mobility in two-dimensional electron gas in AIGaN/GaN heterostructures and in bulk GaN. Journal of electronic materials. 1996;25(5):777-785.
Pampili P, Zubialevich VZ, Maaskant P, Akhter M, Corbett B, Parbrook PJ. InAlN-based LEDs emitting in the near-UV region. Japanese Journal of Applied Physics. 2019 May 23;58(SC):SCCB33.
Kurosawa T. Monte Carlo calculation of hot electron problems. In Journal of the Physical Society of Japan, 1966; 21:424-426.
Bachir N, Hamdoune A, Bouazza B, Chabane-Sari NE. Effect of the temperature and doping on electron transport in AlxGa1− xN alloy by monte carlo method. InIOP Conference Series: Materials Science and Engineering 2010 Nov 1 (Vol. 13, No. 1, p. 012012). IOP Publishing.
Hamdoune A, Bachir N. Effects of Temperature and Concentration ofIndium within Bulk Cubic InxGa1-XN: Calculation of Steady State Electron Transportby Method of Monte Carlo Simulation. International Journal of Computer and Electrical Engineering. 2010;2(5):891.
Bachir N, Hamdoune A, Sari NE. Steady-state electron transport within InAlN bulk ternary nitride, using the Monte Carlo method. International Journal of Materials Science and Applications. 2014; 3(2): 20-24
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